(China (Mainland))
Product Summary
The NUP2301MW6T1G is a low capacitance diode array for ESD protection in two data lines. It is designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD (electrostatic discharge).
Parametrics
Maximum ratings: (1)Reverse Voltage, VR: 70 Vdc; (2)Forward Current, IF: 200 mAdc; (3)Peak Forward Surge Current, IFM(surge): 500 mAdc; (4)Repetitive Peak Reverse Voltage, VRRM: 70 V; (5)Average Rectified Forward Current (Averaged over any 20 ms Period), IF(AV): 715 mA; (6)Repetitive Peak Forward Current, IFRM: 450 mA; (7)Non-Repetitive Peak Forward Current, IFSM: 2.0A at t = 1.0 μs; 1.0A at t = 1.0 ms; 0.5 A at t = 1.0 S.
Features
Features: (1)Single Package Integration Design; (2)Provides ESD Protection for JEDEC Standards JESD22: Machine Model = Class C; Human Body Model = Class 3B; (3)Protection for IEC61000-4-2 (Level 4): 8.0 kV (Contact); 15 kV (Air); (4)Ensures Data Line Speed and Integrity; (5)Fewer Components and Less Board Space; (6)Direct the Transient to Either Positive Side or to the Ground; (7)Pb-Free Package is Available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 NUP2301MW6T1G |
ON Semiconductor |
Rectifiers Low Cap. for ESD Protection in 2 Line |
Data Sheet |
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NUP2301MW6T1G |
ON Semiconductor |
Rectifiers Low Cap. for ESD Protection in 2 Line |
Data Sheet |
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NUP2301MW6T1 |
ON Semiconductor |
Rectifiers Low Cap. for ESD |
Data Sheet |
Negotiable |
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